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December 2013
FDP075N15A / FDB075N15A
N-Channel PowerTrench ? MOSFET
150 V, 130 A, 7.5 m Ω
Features
? R DS(on) = 6.25 m Ω (Typ.) @ V GS = 10 V, I D = 100 A
? Fast Switching
? Low Gate Charge
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor ’s advanced PowerTrench ? process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor Drives and Uninterruptible Power Supplies
? Micro Solar Inverter
D
D
GD
S
TO-220
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDP075N15A_F102
FDB075N15A
150
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±20
130*
92
V
A
I DM
Drain Current
- Pulsed
(Note 1)
522
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 3)
588
6.0
333
2.22
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175
300
o C
o C
* Package limitation current is 120 A.
Thermal Characteristics
Symbol
Parameter
FDP075N15A_F102
FDB075N15A
Unit
Thermal Resistance, Junction to Ambient, D2-PAK (1 in Pad of 2-oz Copper), Max.
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
0.45
62.5
40
o
C/W
?2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
1
www.fairchildsemi.com
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